作者: Tania Henry , Kyungkon Kim , Zaiyuan Ren , Christopher Yerino , Jung Han
DOI: 10.1021/NL071530X
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摘要: We report the growth of horizontally aligned arrays and networks GaN nanowires (NWs) as resonant components in nanoelectromechanical systems (NEMS). A combination top-down selective area (SAG) bottom-up vapor−liquid−solid (VLS) synthesis enables flexible fabrication highly ordered nanowire situ with no postgrowth dispersion. Mechanical resonance free-standing are measured, quality factors (Q) ranging from 400 to 1000. obtained a Young's modulus (E) ∼338 GPa an array NWs varying diameters lengths. The measurement allows detection motion rotating frame reveals dual fundamental modes two orthogonal planes. universal ratio between frequencies these modes, irrespective their dimensions, is observed attributed isosceles cross section NWs.