作者: D. Vizman , C. Tanasie
DOI: 10.1016/J.JCRYSGRO.2013.02.014
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摘要: Abstract Based on numerical modeling, a novel method for melt stirring in the directional solidification of multicrystalline silicon is proposed. It consists two electrodes contact with free surface. The whole placed low intensity vertical magnetic field and an electrical DC current passes through electrodes. was found that even small (10 mT) max 10 A can produce significant effect. expected to influence dopant impurities distribution beneficial way. interface shape also studied it large currents (5–10 A) make impact shape, but values (2 A) be deflection.