Ferroelectric Thin Films for Memory Applications: Nanoscale Characterization by Scanning Force Microscopy

摘要: Development of high-density ferroelectric memory devices requires implementation new techniques capable high-resolution non-destructive testing these devices. This paper considers the principle and application scanning force microscopy, namely its piezoresponse mode, to nanoscale characterization switching behavior reliability properties thin films capacitors. Spatial variations in imprint within individual capacitors have been studied by probing local characteristics. Investigation scaling effect on capacitor-to-capacitor variability parameters has used predict grain size limit sustain a required level performance Special attention is given investigation microscopic mechanisms polarization decay (retention loss) dielectric breakdown.