作者: Albin Antony , S. Pramodini , I.V. Kityk , M. Abd-Lefdil , A. Douayar
DOI: 10.1016/J.PHYSE.2017.08.015
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摘要: Abstract Electron beam induced effects on Fluorine doped ZnO thin films (FZO) grown by chemical spray pyrolysis deposition technique were studied. The samples exposed to 8 MeV electron at different dose rate ranging from 1 kGy 4 kGy. All exhibit a polycrystalline nature which shows an increase in crystallanity with irradiation dosages. effectively controls the surface morphology and its linear optical characteristics. Z-Scan was employed evaluate sign magnitude of nonlinear refractive index absorption coefficient using continuous wave laser 632.8 nm as light source. Enhancement third order properties noted due irradiation. Tailoring physical NLO beam, FZO becomes promising candidate for various optoelectronic applications such phase change memory devices, pulse compression, switching narrowing.