Growth of plate like γ-CuI nanostructure on copper substrate by hydrothermal evaporation of solution

摘要: Abstract Nanostructured γ-CuI thin film is grown on copper and Y-cut SiO2 single crystal substrates by a new method of hydrothermal evaporation solution at low temperature 200 °C. Cuprous iodide nanostructure various growth time 0.5, 1, 1.5 h. The morphology structure deposited layers are evaluated field emission scanning electron microscopy X-ray diffraction, respectively. Electrical properties films investigated 2-point probe measurement. results show that pure crystalline CuI nanocrystals the Cu substrate 200 °C 0.5 h. main mechanism in plate-like from polar direction CuI. In addition, increasing not only causes larger size particles, but also increases thickness ohmic resistance films.