作者: Guochen Lin , Fengzhou Zhao , Yuan Zhao , Dengying Zhang , Lixin Yang
DOI: 10.3390/MA9120990
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摘要: Copper iodide (CuI) thin films were grown on Si(100) substrates using a copper film iodination reaction method. It was found that γ-CuI have uniform and dense microstructure with (111)-orientation. Transmission spectra indicated CuI an average transmittance of about 60% in the visible range optical band gap is 3.01 eV. By checking effect thickness Cu annealing condition photoluminescence (PL) character films, luminescence mechanisms been comprehensively analyzed, origin different PL emissions are proposed vacancy iodine as defect levels.