Preparation and characterization of highly c-axis-oriented Bi4Ti3O12 thin films

摘要: Highly c-axis-oriented bismuth litanale (Bi4Ti3O12) thin films were prepared on (100)-oriented silicon wafers by rf planar magnetron sputtering using a target of Bi2TiO5 ceramic at low substrate temperature 600 °C. The with c-axis orientation up to 99%. obtained under high deposition rate approximately 1.1 μm h 1. Dielectric constant these dependence film thickness. This behavior was explained assuming low-dielectric-constant interface layer. Using this assumption, the dielectric Bi4Ti3O12 estimated be 140. value is similar that along in bulk form. A D E hysteresis characteristic has been observed room temperature. remanent polarisation and coercive field are 0.8 μC cm 2 20 kV respectively. From analysis refractive index, layer confirmed an oxidixed silicon, which formed before or during deposition.