Microstructures and Electrical Properties of Niobium-doped Bi 4 Ti 3 O 12 Thin Films Fabricated by a Sol-gel Route
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DOI: 10.3740/MRSK.2003.13.5.317
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摘要: Bismuth layered structure ferroelectric thin films, / (BTO) and Nb-doped BTO (BTN) were prepared on the Pt(111)/Ti//Si(100) substrates by a sol-gel route. We investigated Nb-doping effect grain orientation properties. ion substitution for in perovskite layers of decreased degree c-axis increased remanent polarization (2Pr). The fatigue resistance film was shown to be superior that BTO, leakage current about 1 order magnitude compared with BTO. improvement properties doping could attributed changes space charge densities film.
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