Bidirectional switch having back to back field effect transistors
作者： Sik Lui
DOI:
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摘要: A bi-directional semiconductor switching device includes first and second vertical field effect transistors (FETs) formed in tandem from a substrate. source for the FET is on side of substrate opposite side. Gates both FETs are disposed common set trenches drift region that sandwiched between sources FETs. The layer acts as drain FET.
lens.org 参考文章(58)
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