摘要: Abstract The dissolution of NiO in dilute H 2 SO 4 has been investigated with particular referenceto the effect small amounts foreign ions on rate. rate is affected remarkably by O pressure prevailing during preparation specimen, storing period and atmosphere after preparation, nature concentration solution. These effects can be ascribed to adsorption reducing molecules or defect sites surface. If a amount ions, such as Fe 3+ I − , present solution, they will adsorb preferentially at thus hinder initiation dissolution. Even 1 ppm these shows conspicuous rate, order magnitude each ion accordance that their standard redox potential. This explained similar consideration depletive gas p -type semiconductors.