Thermal Expansion Coefficient Considerations on Field-Effect Mobility of Pentacene Organic Thin-Film Transistors With an AlN Gate Dielectric

摘要: The field-effect mobility of pentacene-based organic thin-film transistors (OTFTs) with AlN as the gate dielectric was strongly affected by substrate temperature during pentacene deposition. μFE extracted from transfer characteristics for temperatures 70 °C, 50 and room (RT) are 0.06, 0.18, 1 cm2/Vs, respectively. (001) peak position phase in grazing-incidence X-ray diffraction spectra decreases 5.75 ° (70 °C) to 5.65° (RT). small angle reduction (-0.1°) indicates that c-axis triclinic structure is contracted due stress at pentancene/AlN interface, which supported shift Raman ~ 1373 ncm-1. A mechanism based on difference coefficient thermal expansion proposed explain enhancement OTFTs RT.