Sn@SnO2 attached on carbon spheres as additive-free electrode for high-performance pseudocapacitor

摘要: Absract Utilization of metal oxide/supports interface structures could generate high- performance electrochemical materials for clean energy storage and conversion. However, designing the interfaces with highly enhanced conductivity cycle durability remains a significant challenge. Here, we demonstrate an in-situ growth technique to synthesize Sn/SnO 2 @C composite nano-Sn species attached on surface carbon spheres (denoted as @C) during carbonization sol-gel precursors tin (IV) tetrachloride pentahydrate (SnCl 4 ·5H O) Resorcinol-Formaldehyde (Sn 4+ -RF) in N . We investigate nucleation crystal from Sn -RF precursor variation concentration acid value heat-treatment temperature. @C-(1.0, 800) supercapacitor electrode achieves maximum specific capacitance 906.8 F g −1 at scan rate 1 mV s 6 M KOH solution, excellent 2000 cycles 5 A g The performances that charge occurs mainly due redox reactions between binary oxidation states: Sn↔Sn(OH) 6 2− basic electrolyte, hierarchical porosity distinct structure, which is formed situ. work provides new insights into rational design Sn@C composites pseudocapacitor other devices.