作者: Toke M. Andersen , Florian Krismer , Johann W. Kolar , Thomas Toifl , Christian Menolfi
DOI: 10.1109/APEC.2013.6520285
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摘要: The future trends in microprocessor supply current requirements represent a bottleneck for next generation high-performance microprocessors since the number of pins will constitute an increasingly larger fraction total package available. This leaves few available signaling. On-chip power conversion is means to overcome this limitation by increasing input voltage - thereby reducing and performing final on chip itself. paper details design implementation on-chip switched capacitor converters deep submicron technologies. High capacitance density trench capacitors with low parasitic bottom plate ratio technology facilitate high efficiency converter implementations. measured performance 2 : 1 implemented 32nm SOI CMOS 1.8V results 4.6W/mm2 at 86% when operated switching frequency 100MHz.