作者: Mohammad M. Hamasha , Khalid Alzoubi , James C. Switzer , Susan Lu , Seshu B. Desu
DOI: 10.1016/J.TSF.2011.06.062
关键词:
摘要: Abstract This work is designed to study crack development and resistance changes in aluminum thin films under stretching. Crack relative electrical change (∆R/R 0 ) of film on 127-μm poly ethylene terephthalate substrates were investigated as a function engineering strain. Four thicknesses considered for the films: 50, 100, 200, 500 nm. The stress–engineering strain curves very similar all thicknesses. Three rates this study: 0.1 min − 1 , 0.5 min 1.0 min . Before yield point, there was no stress difference different rates. However, after higher at rate. It found that ∆R/R sensitive thickness. Optical microscope images high magnification showed cracks observed 2% 500 nm-thick 8% 50 nm-thick films. Short lateral (perpendicular original cracks) 20% 100 200 nm thick 30% 500 nm