An Electron Beam Exposure System (VL-R1)

摘要: The system design and performance of a newly developed electron beam exposure are reported. basic operation is raster scan over narrow field with continuously moving stage. capable practical making master masks reticles including composite patterns. A pattern size as large 105×105 dots managed by data compaction method continuous flow from magnetic disk to DMA. LSI patterns 2 µm geometry delineated at speed cm2/min. charge density high 15 µC/cm2 20 kV was achieved.