The studies of surface properties of 1.5 MeV Si-implanted silicon by multiphonon Raman spectrum
作者： X Huang
DOI: 10.1088/0022-3727/28/1/028
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摘要: The surface layer of crystalline silicon implanted by 1.5 MeV Si ions with doses ranging from 1*1011 to 1*1015 Si+ cm-2 has been studied two-phonon Raman spectra in both the acoustical overtone region and optical region. Two-phonon line intensities shifts have used investigate properties skin layer. experimental showed a decrease intensity for peaks also different amounts directions depending on particular phonons. It is suggested that decreases lines are caused defects near induced implantation due stress high-energy implantation. values obtained compared those previously one-phonon shifts. comparison shows make no contribution show increases as function doses.
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