Measurement of the conduction‐band discontinuity of molecular beam epitaxial grown In0.52Al0.48As/In0.53Ga0.47As, N‐n heterojunction by C‐V profiling
作者： R. People , K. W. Wecht , K. Alavi , A. Y. Cho
DOI: 10.1063/1.94149
关键词:
摘要: We report the first measurement of conduction‐band discontinuity ΔEc for molecular beam epitaxial grown N‐n In0.52Al0.48As/In0.53Ga0.47As heterojunction using C‐V profiling technique outlined by Kroemer et al. find ΔEc=(0.50±0.05) eV @297 K corresponding to (71±7)% ΔEg. An interface charge density σi (4.0±0.8)×1011 cm−2 was also obtained. A knowledge is importance quantifying carrier confinement in double heterostructure lasers fabricated from these ternary compounds.
scitation.org
aip.org 
sci-hub.se 参考文章(9)
R. Dingle, W. Wiegmann, C. H. Henry, Quantum States of Confined Carriers in Very ThinAlxGa1−xAs-GaAs-AlxGa1−xAsHeterostructures Physical Review Letters. ,vol. 33, pp. 827- 830 ,(1974) , 10.1103/PHYSREVLETT.33.827
D. J. STUKEL, R. N. EUWEMA, Energy-Band Structure of Aluminum Arsenide Physical Review. ,vol. 188, pp. 1193- 1196 ,(1969) , 10.1103/PHYSREV.188.1193
C W Litton, R B Dennis, S D Smith, Infra-red cyclotron resonance in n-type epitaxial InAs with evidence of polaron coupling Journal of Physics C: Solid State Physics. ,vol. 2, pp. 2146- 2155 ,(1969) , 10.1088/0022-3719/2/11/329
W.C. Johnson, P.T. Panousis, The influence of debye length on the C-V measurement of doping profiles IEEE Transactions on Electron Devices. ,vol. 18, pp. 965- 973 ,(1971) , 10.1109/T-ED.1971.17311
D. Olego, T. Y. Chang, E. Silberg, E. A. Caridi, A. Pinczuk, Compositional dependence of band‐gap energy and conduction‐band effective mass of In1−x−yGaxAlyAs lattice matched to InP Applied Physics Letters. ,vol. 41, pp. 476- 478 ,(1982) , 10.1063/1.93537
H. Kroemer, Wu‐Yi Chien, J. S. Harris, D. D. Edwall, Measurement of isotype heterojunction barriers byC‐Vprofiling Applied Physics Letters. ,vol. 36, pp. 295- 297 ,(1980) , 10.1063/1.91467
T. Miya, Y. Terunuma, T. Hosaka, T. Miyashita, Ultimate low-loss single-mode fibre at 1.55 μm Electronics Letters. ,vol. 15, pp. 106- 108 ,(1979) , 10.1049/EL:19790077
D. P. Kennedy, P. C. Murley, W. Kleinfelder, On the measurement of impurity atom distributions in silicon by the differential capacitance technique Ibm Journal of Research and Development. ,vol. 12, pp. 399- 409 ,(1968) , 10.1147/RD.125.0399
K. Alavi, R. Aggarwal, S. Groves, Interband magnetoabsorption of In 0.53 Ga 0.47 As Physical Review B. ,vol. 21, pp. 1311- 1315 ,(1980) , 10.1103/PHYSREVB.21.1311