Method for anodic bonding of wafers and device
作者： Eckhard Graf , Frank Fischer
DOI:
关键词:
摘要: A method for anodic bonding of wafers and a device essentially composed such bonded wafers. An intermediate layer is placed between two wafers, after which the are anodically bonded. The have advantage being implementable manufacturable, respectively, in particularly cost-effective manner. plastically encloses any possible particles present or evens out differences height wafer surfaces to be thus prevents extensive bond defects from occurring.
lens.org 参考文章(19)
Herbert Demel, Method for controlling a flow of fuel to an engine of a vehicle during overrun operation ,(1993)
Hans-Joachim Dipl Phys Quenzer, Wolfgang Dipl Phys Benecke, Direct substrate bonding ,(1992)
Chris Macris, Heat dissipating silicon-on-insulator structures ,(2001)
Takashi Murasugi, Masaaki Suga, Hideo Hamada, Yoshiro Morimoto, Tadashi Suzuki, Fuel cut-off control system in fuel injection internal combustion engine with automatic power transmission ,(1982)
Francis J Kub, Karl D Hobart, Single-crystal material on non-single-crystalline substrate ,(2000)
Deidre A. Hirschfeld, Chad S. Watson, W Kent Schubert, Method for anodically bonding glass and semiconducting material together ,(2001)
Jason B. Elledge, Zhong-Yi Xia, David A. Cathey, James J. Hofmann, Anodically bonded elements for flat-panel displays ,(2003)
Aaron Partridge, Markus Lutz, Silvia Kronmueller, Electromechanical system having a controlled atmosphere, and method of fabricating same ,(2009)