Porous silicon quantum dot photodetector
作者： Devendra K. Sadana , Joel P. de Souza , Harold J. Hovel
DOI:
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摘要: Embodiments of the present invention provide a solar energy converter, which includes silicon layer having at least two regions first and second conductivity type that form P-N junction, portion being porous, pores in porous containing semiconductor material, material different from silicon; electrode placed bottom top surface respectively. Methods manufacturing same are also provided.
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