Metal positioning on silicon surfaces using the etching of buried dislocation arrays.

摘要: Large-area Si(001) nanopatterned surfaces obtained by etching dislocation line arrays have been used to drive the positioning of metallic islands. A method combining wafer bonding (001) silicon on insulator layers and preferential chemical allows controlling periodicity square trench in 20-50 nm lateral range with an accuracy less than 1 a depth about 4-5 nm. The interfacial area containing plane can be removed single crystal maintaining morphological patterning obtained. It is shown that oxidized or deoxidized Ni, Au Ag islands for 20 long order, directly transferred from network, Ni cases.