Plasma emission controlled multi-target reactive sputtering for in-situ crystallized Pb(Zr,Ti)O3 thin films on 6″ Si-wafers
作者： V.S. Vidyarthi , W.-M. Lin , G. Suchaneck , G. Gerlach , C. Thiele
DOI: 10.1016/J.TSF.2006.10.131
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摘要: Abstract Reactive sputtering from three metallic targets (Ti, Zr, and Pb) in O 2 Ar gas mixture was utilized to deposit in-situ crystallized Pb(Zr,Ti)O 3 (PZT) thin films onto ZrO buffered 6″ Si-wafers. The plasma emission control of reactive used stabilize Ti target the “transition region” during co-sputtering. stable reproducible PZT film deposition on large area has been demonstrated. behavior metal explained basis change surface binding energies. morphological, structural, chemical properties have examined as a function temperature (480–580 °C). At 580 °C, directly into perovskite phase.
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