The deposition of transition metal layers on sulphur-terminated InP(100) surfaces studies by core level photoemission spectroscopy

摘要: Abstract The deposition of thin layers manganese and iron on sulphur-terminated InP(100) surfaces has been investigated by soft X-ray core level photoemission. sulphur treatment was carried out in situ using an ultrahigh vacuum compatible electrochemical source. Thin metal were deposited onto the sulphur-induced (2×1) surface reconstruction both n - p -type at room temperature. Fermi position for doping types following anneal found to lie range 1.05–1.15 eV above top valence band. There is evidence a strong chemical interaction between metals which removes moves back towards mid-gap types. Chemically shifted components In 4d P 2P levels diffuse through growing overlayers segregates top.