Passivation of the InP surface using polysulfide and silicon nitride overlayer

摘要: For the first time, excellent passivation of defect states at SiNx/InP interface has been achieved using ammonium sulfide solution containing excess sulfur and phosphorous pentasulfide. Silicon nitride overlayers have deposited ∼200 °C electron cyclotron resonance plasma‐enhanced chemical vapor deposition technique. The room‐temperature integrated photoluminescence (PL) intensity passivated InP approximately doubled following deposition. Under similar conditions, PL untreated sample decreased by a factor five. trap density, estimated high‐low capacitance technique, is ∼1012 cm−2 eV−1. devices are stable, with no noticeable change observed over 30‐day period.