PREPARATION AND CHARACTERISATION OF Ti/BaTiO3/InP MIS STRUCTURES
作者： G. SONIA , M. SENTHIL KUMAR , D. ARIVUOLI , J. KUMAR , K. BASKAR
DOI: 10.1142/S0217979202009767
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摘要: Indium Phosphide (InP) is one of the most promising materials for high-speed electronic and optoelectronic devices. In present investigation n-type InP substrates orientation grown by LEC technique in our laboratory were used to study surface state densities. The wafer was polished with HBr:K2Cr2O7:H2O (BCA) polishing solution decreased organic solvents. Au:Ge has a back ohmic contact annealed at 623K 5 min. under nitrogen ambient. Barium Titanante (BaTiO3), dielectric material as an insulator fabricate InP-MIS structures. BaTiO3 thin film been deposited on sol-gel through precursor route. Titanium metal made obtain MIS structure. Compositional analysis carried out using XPS EDX. By Capacitance Voltage measurements minimum density (Nss) value low 4.5 × 1010cm-2eV-1 obtained T...
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sci-hub.se 参考文章(10)
Y. Robach, A. Gagnaire, J. Joseph, E. Bergignat, G. Hollinger, Optical properties of native oxides on InP Thin Solid Films. ,vol. 162, pp. 81- 88 ,(1988) , 10.1016/0040-6090(88)90196-4
A. A. Studna, G. J. Gualtieri, Optical properties and water absorption of anodically grown native oxides on InP Applied Physics Letters. ,vol. 39, pp. 965- 966 ,(1981) , 10.1063/1.92627
L.M. Terman, An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes Solid-State Electronics. ,vol. 5, pp. 285- 299 ,(1962) , 10.1016/0038-1101(62)90111-9
Fan Wang, Antti Uusimäki, Seppo Leppävuori, S. F. Karmanenko, A. I. Dedyk, V. I. Sakharov, I. T. Serenkov, Ba0.7Sr0.3TiO3 ferroelectric film prepared with the sol-gel process and its dielectric performance in planar capacitor structure Journal of Materials Research. ,vol. 13, pp. 1243- 1248 ,(1998) , 10.1557/JMR.1998.0177
A. Kapila, V. Malhotra, Passivation of the InP surface using polysulfide and silicon nitride overlayer Applied Physics Letters. ,vol. 62, pp. 1009- 1011 ,(1993) , 10.1063/1.108564
M. Okamura, T. Kobayashi, Current drifting behaviour in InP MISFET with thermally oxidised InP/InP interface Electronics Letters. ,vol. 17, pp. 941- 942 ,(1981) , 10.1049/EL:19810658
P. C. Joshi, S. B. Krupanidhi, Strontium titanate thin films by rapid thermal processing Applied Physics Letters. ,vol. 61, pp. 1525- 1527 ,(1992) , 10.1063/1.107536
G. Eftekhari, Electrical Conduction Through Anodic Oxides on Sulfur Passivated InP Journal of The Electrochemical Society. ,vol. 141, pp. 299- 302 ,(1994) , 10.1149/1.2054704
San-Yuan Chen, I-Wei Chen, Cracking during Pyrolysis of Oxide Thin Films‐Phenomenology, Mechanisms, and Mechanics Journal of the American Ceramic Society. ,vol. 78, pp. 2929- 2939 ,(1995) , 10.1111/J.1151-2916.1995.TB09066.X
Tae-Gyoung In, Sunggi Baik, Sangsub Kim, Leakage current of Al- or Nb-doped Ba 0.5 Sr 0.5 TiO 3 thin films by rf magnetron sputtering Journal of Materials Research. ,vol. 13, pp. 990- 994 ,(1998) , 10.1557/JMR.1998.0139