CIS thin film solar cells with evaporated InSe buffer layers

摘要: Abstract This paper describes the investigations of CIS-based solar cells with a new InxSey (IS) buffer layer. Studies were concentrated on determining deposition conditions to get thin films adequate properties be used in substitution CdS layer, usually employed fabrication this type devices. Before cell fabrication, layers grown by evaporation In2Se3 compound characterized through transmittance and X-ray diffraction measurements. It was found that good results can obtained using indium selenide film as phase. Solar structure Mo/CIS/In2Se3/ZnO fabricated. The ZnO layer deposited reactive absorber CIS Mo two-stage process. preliminary are Jsc=30.8 mA/cm2, Voc=0.445 V, FF≈0.6 η=8.3% an irradiance 100 mW/cm2. fabricated CBD substrate, prepared under same cells, gave following results: Voc=0.43 V, Jsc=34 mA/cm2, FF≈0.63 η=9.2%.