作者: S E Babayan , J Y Jeong , V J Tu , J Park , G S Selwyn
DOI: 10.1088/0963-0252/7/3/006
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摘要: A plasma jet has been developed which deposits silica films at up to 760 Torr and 115 C. The operates by feeding oxygen helium gas between two coaxial electrodes that are driven a 13.56 MHz radio frequency source 40 500 W. Tetraethoxysilane is mixed with the effluent of directed onto substrate located 1.7 cm downstream. properties films, as determined infrared spectroscopy capacitance measurements, comparable those thermally grown silicon dioxide