Deposition of silicon dioxide films with an atmospheric-pressure plasma jet

作者: S E Babayan , J Y Jeong , V J Tu , J Park , G S Selwyn

DOI: 10.1088/0963-0252/7/3/006

关键词:

摘要: A plasma jet has been developed which deposits silica films at up to 760 Torr and 115 C. The operates by feeding oxygen helium gas between two coaxial electrodes that are driven a 13.56 MHz radio frequency source 40 500 W. Tetraethoxysilane is mixed with the effluent of directed onto substrate located 1.7 cm downstream. properties films, as determined infrared spectroscopy capacitance measurements, comparable those thermally grown silicon dioxide

参考文章(22)
Norman B. Colthup, Lawrence H. Daly, Stephen E. Wiberley, Introduction to Infrared and Raman Spectroscopy ,(1964)
F. S. Becker, Low-pressure deposition of high-quality SiO2 films by pyrolysis of tetraethylorthosilicate Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. ,vol. 5, pp. 1555- 1563 ,(1987) , 10.1116/1.583673
Koichi Ikeda, Satoshi Nakayama, Masahiko Maeda, Characteristics of Silicon Dioxide Films on Patterned Substrates Prepared by Atmospheric‐Pressure Chemical Vapor Deposition Using Tetraethoxysilane and Ozone Journal of The Electrochemical Society. ,vol. 143, pp. 1715- 1718 ,(1996) , 10.1149/1.1836706
Carl Andeen, Donald Schuele, John Fontanella, Effect of OH− on the low‐frequency dielectric constant of vitreous silica Journal of Applied Physics. ,vol. 45, pp. 1071- 1074 ,(1974) , 10.1063/1.1663369
J Y Jeong, S E Babayan, V J Tu, J Park, I Henins, R F Hicks, G S Selwyn, Etching materials with an atmospheric-pressure plasma jet Plasma Sources Science and Technology. ,vol. 7, pp. 282- 285 ,(1998) , 10.1088/0963-0252/7/3/005
Takaaki Kawahara, Akimasa Yuuki, Yasuji Matsui, Reaction Mechanism of Chemical Vapor Deposition Using Tetraethylorthosilicate and Ozone at Atmospheric Pressure Japanese Journal of Applied Physics. ,vol. 31, pp. 2925- 2930 ,(1992) , 10.1143/JJAP.31.2925