Deposition of coatings using an atmospheric pressure plasma jet
作者： Steve E. Babayan , Robert F. Hicks , Gary S. Selwyn
DOI:
关键词: Volumetric flow rate 、 Oxygen 、 Analytical chemistry 、 Helium 、 Torr 、 Atmospheric-pressure plasma 、 Deposition (phase transition) 、 Jet (fluid) 、 Chemistry 、 Plasma-enhanced chemical vapor deposition
摘要: The use of a non-thermal source which is capable operation at 760 torr demonstrated. As an example the application present invention, helim/oxygen gas mixture introduced into annular region (20) between two coaxial electrodes (14) driven by 13.56 MHz radio frequency (RF) (18) 40 and 500 W to produce stable plasma jet. detected optical emission spectroscopy (OES), high flux metastable oxygen no ions are exit this Silicon dioxide films deposited introducing tetraethoxysilane (TEOS) effluent stream. A deposition rate 3020 +/- 250 A/min. achieved with RF power 400 W, 0.2 TEOS, 11.1 oxygen, 748.7 helium, total flow 41 L/m.
google.co.uk 参考文章(9)
George Steinberg, Electrode for use in a plasma assisted chemical etching process ,(1994)
Jerome J. Schmitt, Bret L. Halpern, Microwave plasma assisted supersonic gas jet deposition of thin film materials ,(1992)
S E Babayan, J Y Jeong, V J Tu, J Park, G S Selwyn, R F Hicks, Deposition of silicon dioxide films with an atmospheric-pressure plasma jet Plasma Sources Science and Technology. ,vol. 7, pp. 286- 288 ,(1998) , 10.1088/0963-0252/7/3/006
Gary S. Selwyn, Atmospheric-pressure plasma jet ,(1998)
Christian Wohlrab, Roman Bischof, Albert Koller, Markus Hofer, optical device and method for coating an optical substrate ,(1995)
Thierry Sindzingre, Stephane Rabia, François Coeuret, Method and device for forming an excited gaseous atmosphere lacking electrically charged species used for treating nonmetallic substrates ,(1994)
Reinhard Mathis, Vacuum treatment apparatus comprising annular treatment chamber ,(1992)
Shigenori Hayashi, Shunpei Yamazaki, Hideomi Koinuma, Plasma generating device ,(1993)