Photoelectric conversion device, manufacturing method thereof, and apparatus
作者： Endo Nobuyuki
DOI:
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摘要: A photoelectric conversion device comprises a semiconductor substrate including portion, silicon oxide film arranged above the and an insulating between portion film. An n-type first impurity region constituting part of p-type second are provided in substrate. region, contain boron. integrated value boron concentration from surface to position where takes minimal is larger than that upper
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