Image sensor cells
作者： James W. Adkisson , Richard J. Rassel , Mark D. Jaffe , Jeffrey P. Gambino , John J. Ellis-Monaghan
DOI:
关键词:
摘要: A structure (and method for forming the same) an image sensor cell. The includes (a) a semiconductor substrate; (b) charge collection well on substrate, comprising material doped with first doping polarity; (c) surface pinning layer and in direct physical contact well, second polarity opposite to (d) electrically conducting push electrode being but not well.
lens.org 参考文章(22)
Jung-Chak Ahn, Gue-hyung Kwon, Youn-Jung Lee, CMOS type image sensor ,(2002)
Eric G. Stevens, Robert M. Guidash, Reduced dark current for CMOS image sensors ,(2003)
Yuko Adachi, Shinji Uya, Tetsuo Yamada, Solid state image pick-up device ,(2003)
Inna Patrick, Double pinned photodiode for CMOS APS and method of formation ,(2004)
Seong Dong Kim, In Sool Chung, Image sensor with improved dynamic range by applying negative voltage to unit pixel ,(2000)
Robert M. Guidash, Alternate method for photodiode formation in CMOS image sensors ,(2000)
Eric R. Fossum, Two-transistor pixel with buried reset channel and method of formation ,(2002)
Woodward Yang, Ju Il Lee, Nan Yi Lee, CMOS image sensor with equivalent potential diode ,(1999)
Chih-huei Wu, Tiemin Zhao, Xinping He, Active pixel having reduced dark current in a cmos image sensor ,(2002)
Bart Dierickx, Buried, fully depletable, high fill factor photodiodes ,(1999)