Extrinsic gettering of GaAs wafers for MESFETS and integrated circuits

摘要: A method is disclosed for extrinsically gettering imperfections in a semi-insulating GaAs wafer. This accomplished by subjecting the wafers to processing conditions which allow migrate toward mechanically damaged surface region of Migration occurs during low temperature heat treatment over an extended time period. The wafer bead blasting and subsequently heated range 400 600 degrees Celsius forming gas period between 12 120 hours. Significant improvements qualities performance fabricated MESFET devices are achieved.