Effect of film thickness on interface and electric properties of BiFeO3 thin films
作者： Chia-Ching Lee , Jenn-Ming Wu
DOI: 10.1016/J.APSUSC.2007.02.060
关键词:
摘要: … The effect of the thickness of BFO films varying from 85 to 280 nm on electrical properties … to increase with the BFO film thickness. The dielectric constant of BFO thin films measured at 1 …
harvard.edu
elsevier.com
sci-hub.se 参考文章(18)
R. Bouregba, G. Le Rhun, G. Poullain, G. Leclerc, Investigation of thickness dependence of the ferroelectric properties of Pb(Zr0.6Ti0.4)O3 thin-film capacitors Journal of Applied Physics. ,vol. 99, pp. 034102- ,(2006) , 10.1063/1.2170414
Dongeun Lee, Min G Kim, Sangwoo Ryu, Hyun M Jang, Sang G Lee, None, Epitaxially grown La-modified BiFeO3 magnetoferroelectric thin films Applied Physics Letters. ,vol. 86, pp. 222903- ,(2005) , 10.1063/1.1941474
Kwi Young Yun, Dan Ricinschi, Takeshi Kanashima, Minoru Noda, Masanori Okuyama, Giant Ferroelectric Polarization Beyond 150 μC/cm2 in BiFeO3 Thin Film Japanese Journal of Applied Physics. ,vol. 43, pp. 647- ,(2004) , 10.1143/JJAP.43.L647
Hiroshi Uchida, Risako Ueno, Hiroshi Nakaki, Hiroshi Funakubo, Seiichiro Koda, Ion Modification for Improvement of Insulating and Ferroelectric Properties of BiFeO3 Thin Films Fabricated by Chemical Solution Deposition Japanese Journal of Applied Physics. ,vol. 44, ,(2005) , 10.1143/JJAP.44.L561
Sushil K. Singh, Risako Ueno, Hiroshi Funakubo, Hiroshi Uchida, Seiichiro Koda, Hiroshi Ishiwara, Dependence of Ferroelectric Properties on Thickness of BiFeO3Thin Films Fabricated by Chemical Solution Deposition Japanese Journal of Applied Physics. ,vol. 44, pp. 8525- 8527 ,(2005) , 10.1143/JJAP.44.8525
Sushil K. Singh, Hiroshi Ishiwara, Reduced Leakage Current in BiFeO3 Thin Films on Si Substrates Formed by a Chemical Solution Method Japanese Journal of Applied Physics. ,vol. 44, ,(2005) , 10.1143/JJAP.44.L734
Yi-Hsien Lee, Jenn-Ming Wu, Yu-Lun Chueh, Li-Jen Chou, Low-temperature growth and interface characterization of BiFeO3 thin films with reduced leakage current Applied Physics Letters. ,vol. 87, pp. 172901- ,(2005) , 10.1063/1.2112181
S. R. Das, P. Bhattacharya, R. N. P. Choudhary, R. S. Katiyar, Effect of La substitution on structural and electrical properties of BiFeO3 thin film Journal of Applied Physics. ,vol. 99, pp. 066107- ,(2006) , 10.1063/1.2180451
P Fischer, M Polomska, I Sosnowska, M Szymanski, Temperature dependence of the crystal and magnetic structures of BiFeO3 Journal of Physics C: Solid State Physics. ,vol. 13, pp. 1931- 1940 ,(1980) , 10.1088/0022-3719/13/10/012
Hélène Béa, M Bibes, A Barthélémy, K Bouzehouane, E Jacquet, A Khodan, J-P Contour, S Fusil, F Wyczisk, A Forget, D Lebeugle, D Colson, M Viret, Influence of parasitic phases on the properties of BiFeO3 epitaxial thin films Applied Physics Letters. ,vol. 87, pp. 072508- ,(2005) , 10.1063/1.2009808