作者: Kento Hiraiwa , Yuki Takahashi , Junichi Mizuno , Melbert Jeem , Seiichi Watanabe
DOI: 10.1016/J.APSUSC.2019.05.292
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摘要: Abstract By adapting hetero-nanostructures in optoelectronic device, a prominent luminescence characteristic can be obtained. The challenge is to engineer the band bending if semiconducting surface gets contact with metal. A galvanic replacement method versatile for bimetallic synthesis. However, nanostructures morphologies varied depending on metals pair or their supporting template. In this study, we demonstrate facile 1-D ZnO nanorods (NRs) growth fabricated by reactions. Without using solution, reaction was implemented joining Zn metal Au, Pt, Ag, Cu, W, and Ni substrate. properties of NRs were characterized photoluminescence (PL) cathodoluminescence scanning transmission electron microscopy (STEM-CL). Based PL analysis result, oxygen vacancy (VO) responsible visible light region emission all ZnO-M samples. Then, STEM-CL highlighted presence zinc interstitial (Zni) at interface ZnO-M. Due bending, interaction between VO Zni resulted formation antisite (ZnO) interface. There no shift due Fermi-level pinning. findings will useful future large-scale synthesis engineering luminescent devices.