Optimized transport properties of LaAlO3/SrTiO3 heterointerfaces by variation of pulsed laser fluence
作者： F Schoofs , T Fix , A S Kalabukhov , D Winkler , Y Boikov
DOI: 10.1088/0953-8984/23/30/305002
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摘要: We show the influence of pulsed laser deposition fluence on transport properties LaAlO(3)/SrTiO(3) (LAO/STO) heterointerface. Structural characterization by x-ray diffraction and medium energy ion spectrometry enables us to deduce that electronic behaviour is extremely sensitive stoichiometry LAO layer as well structural quality STO surface. An optimum balance these two quantities demonstrated for an intermediate fluence.
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