Preparation of Cu(In,Ga)Se2 thin film by sputtering from Cu(In,Ga)Se2 quaternary target
作者： Jiang Liu , Daming Zhuang , Hexin Luan , Mingjie Cao , Min Xie
DOI: 10.1016/J.PNSC.2013.02.006
关键词:
摘要: Abstract Cu(In,Ga)Se 2 (CIGS) thin films were prepared by directly sputtering quaternary target consisting of Cu:In:Ga:Se=25:17.5:7.5:50 at%. The composition and structure CIGS layers have been investigated after annealing at 550 °C under vacuum a Se-containing atmosphere. results show that recrystallization the film occurs chalcopyrite with preferred orientation in (112) direction was obtained. annealed exhibits loss portion Se, while atmosphere reveals compensation Se. Several solar cells three different absorber thicknesses fabricated using soda lime glass/Mo/CIGS/CdS/i-ZnO/ZnO:Al/Al grid stack structure. highest conversion efficiency 9.65% an open circuit voltage 452.42 mV, short current density 32.16 mA cm −2 fill factor 66.32% obtained on 0.755 cm cell area.
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