Identification of Mott insulators and Anderson insulators in self-assembled gold nanoparticles thin films

作者: Cheng-Wei Jiang , I-Chih Ni , Shien-Der Tzeng , Cen-Shawn Wu , Watson Kuo

DOI: 10.1039/C3NR06627D

关键词:

摘要: How the interparticle tunnelling affects charge conduction of self-assembled gold nanoparticles is studied by three means: tuning tunnel barrier width different molecule modification and substrate bending, height high-dose electron beam exposure. All approaches indicate that metal–Mott insulator transition governed predominantly coupling strength, which can be quantified room temperature sheet resistance. The Hubbard gap, following prediction quantum fluctuation theory, reduces to zero rapidly as resistance decreases At very low temperature, fate devices near Mott depends on strength disorder. from nearest-neighbour hopping co-tunnelling between in insulators whereas it variable-range through puddles Anderson insulators. When two-dimensional nanoparticle network under a unidirectional strain, becomes anisotropic so average required describe conduction.

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