Reappraisal of variable-range hopping in quantum-dot solids.

摘要: The temperature dependence of the electrical conductivity assemblies ZnO nanocrystals, studied with an electrochemically gated transistor is very accurately described by relation ln σ = σ0 − (T0/T)x x 2/3 over entire range from 7 to 200 K, independent charge concentration and dielectric environment. These results cannot be explained existing models but are supported on Au nanocrystals where identical was observed (Zabet-Khosousi et al., Phys. Rev. Lett. 2006, 96 (15), 156403). We propose adaptation Efros−Shklovskii variable-range hopping model introducing expression for nonresonant tunneling based local energy fluctuations, which yields exactly that experimentally.