作者: Shiqiang Hao , Fengyuan Shi , Vinayak P. Dravid , Mercouri G. Kanatzidis , Christopher Wolverton
DOI: 10.1021/ACS.CHEMMATER.6B01164
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摘要: Thermoelectric materials enable direct conversion between thermal and electrical energy and provide a viable route for power generation and electric refrigeration. In this paper, we use first-principles based methods to predict a very high figure of merit (ZT) performance in hole doped GeSe crystals along the crystallographic b-axis, with maximum ZT ranging from 0.8 at 300 K to 2.5 at 800 K. This extremely high thermoelectric performance is due to a threefold synergy of properties in this material:(1) the exceptionally low lattice thermal …