Experimental and theoretical studies of band gap alignment in GaAs1−xBix/GaAs quantum wells
作者： R. Kudrawiec , J. Kopaczek , M. P. Polak , P. Scharoch , M. Gladysiewicz
DOI: 10.1063/1.4904740
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摘要: Band gap alignment in GaAs1−xBix/GaAs quantum wells (QWs) was studied experimentally by photoreflectance (PR) and theoretically, ab initio, within the density functional theory which supercell based calculations are combined with alchemical mixing approximation applied to a single atom supercell. In PR spectra, optical transitions related excited states QW (i.e., transition between second heavy-hole electron subband) were clearly observed addition ground state GaAs barrier transition. This observation is clear experimental evidence that this type I deep confinement conduction valence bands. From comparison of data performed for various band alignments, best agreement theoretical has been found offset 52 ± 5%. A very similar offse...
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