Photoreflectance investigation of InAs quantum dashes embedded in In0.53Ga0.47As∕In0.53Ga0.23Al0.24As quantum well grown on InP substrate
作者： W. Rudno-Rudziński , R. Kudrawiec , G. Sęk , J. Misiewicz , A. Somers
DOI: 10.1063/1.2187496
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摘要: Photoreflectance (PR) measurements were performed on molecular-beam-epitaxy-grown self-assembled InAs quantum dashes (QDashes) embedded in an In0.53Ga0.47As∕In0.53Ga0.23Al0.24As well grown InP substrate. PR resonances related to optical transitions all relevant parts of the structure, i.e., InAs∕In0.53Ga0.47As QDashes, InAs∕In0.53Ga0.47As∕In0.53Ga0.23Al0.24As well, and In0.53Ga0.23Al0.24As barriers observed. By matching theoretical calculations within effective mass approximation with experimental data, energy level structure whole system was determined. On basis obtained diagram, it concluded that both electrons heavy holes are localized is Type I.
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