Contactless modulated reflectivity of quasi 0D self-assembled semiconductor structures
作者： G Sęk , R Kudrawiec , M Motyka , P Poloczek , W Rudno‐Rudziński
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摘要: Two different approaches of contactless modulated reflectivity spectroscopy, namely photoreflectance (PR) and electroreflectance (CER), have been used for the investigation quasi 0D self-assembled semiconductor structures, like quantum dots or dashes. First all, advantages disadvantages both techniques are discussed with respect to that certain application, including problems spurious background signals below-band-gap oscillations. Second, modulation mechanism in is analyzed by comparing PR, CER, photoluminescence excitaion excitation. Finally, recent results regarding spectroscopy study several types structures OD objects will be presented. It concern following aspects particular: wetting layer (WL) thickness determination; formation at 2D-3D Stranski-Krastanov growth transition case In x Ga 1 -X AS/GaAs dots; probing excited states electronic structure novel material/design QDot/QDash systems characterization QD-based laser structures.
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