Accurate modeling of Metal/HfO2/Si capacitors
作者： Francisco G. Ruiz , Andrés Godoy , Luca Donetti , I. M. Tienda-Luna , Francisco Gámiz
DOI: 10.1007/S10825-008-0209-3
关键词:
摘要: In this work, we study the differences caused in Capacitance-Voltage (C-V) characteristics of MOS devices when SiO2 is replaced by HfO2 as gate dielectric. A self-consistent Schrodinger-Poisson solver has been developed to include effects quantum confinement and influence different parameters such effective mass, barrier height, dielectric constant (κ) insulator material. Two are considered: Double Gate MOSFET a Surrounding Transistor. The validity Equivalent Oxide Thickness (EOT) studied.
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