A Comprehensive Study of the Corner Effects in Pi-Gate MOSFETs Including Quantum Effects
作者： Francisco J. Garcia Ruiz , Andr�s Godoy , Francisco Gamiz , Carlos Sampedro , Luca Donetti
关键词: Condensed matter physics 、 Gate oxide 、 Quantum mechanics 、 Poisson's equation 、 AND gate 、 Semiconductor device 、 Silicon on insulator 、 Quantum Hall effect 、 Materials science 、 Semiconductor device modeling 、 MOSFET
摘要: In this paper, simulation-based research on the electrostatics of Pi-gate silicon-on-insulator (SOI) MOSFETs is carried out. To do so, a 2-D self-consistent Schrodinger-Poisson solver has been implemented. The inclusion quantum effects demonstrated to be necessary for accurate simulation these devices in nanometer range. Specifically, paper focused corner multiple-gate SOI MOSFETs, defined as formation independent channels with different threshold voltages. Corner are studied function parameters, such doping density, silicon-fin dimensions, rounding, and gate oxide thickness. Finally, relation between transition from fully partially depleted body analyzed.
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