On the doping mechanism of boron-doped hydrogenated amorphous silicon deposited by rf-co-sputtering

摘要: The doping mechanism of boron-doped a-Si:H deposited by rf-co-sputtering was investigated and compared with results obtained plasma enhanced chemical vapor deposition (PECVD). activation energy room temperature conductivity could be varied approximately the same range as that reported for PECVD films. However, there are some relevant discrepancies between these two techniques. First, one needs a much larger amount boron in sputtered films, comparison ones, order to get samples almost energy. This implies efficiency is lower films prepared sputtering. Second, relation dangling bonds impurity concentration does not appear follow square root power law function proposed Street observed indeed. These differences likely related density defects, which higher increase deep defect more topological disorder introduced presence large number inactive impurities.