The effects of ion implantation on the electrical properties of amorphous silicon
作者： S. Kalbitzer , G. Müller , P. G. Le Comber , W. E. Spear
DOI: 10.1080/13642818008245398
关键词: Amorphous silicon 、 Ion implantation 、 Photoconductivity 、 Range (particle radiation) 、 Ion 、 Doping 、 Analytical chemistry 、 Materials science 、 Halogen 、 Impurity
摘要: Abstract In this paper we present the results of a systematic study ion implantation doping in glow-discharge a-Si films using substitutional impurities, P, As, Sb, Bi, B, Al, Ga, and Tl interstitial impurities Na, K, Rb Cs. Implantation provides same range control electrical properties as gas phase doping, but at lower efficiency. The compensation pre-doped specimens by has been investigated found to be feasible predictable. As an example characteristics implanted p-n junction are shown. Results with F, Cl, Br I implantations indicate that halogens do not act acceptors. effect damage on its dependence temperature have some detail. Photoconductivity measurements provide useful approach problem it is concluded density gap states increases dose, even for hot implantations. A ...
harvard.edu
sci-hub.se 参考文章(9)
James W. Corbett, George D. Watkins, Radiation effects in semiconductors Gordon and Breach Science Publishers. ,(1971)
W. Beyer, R. Fischer, H. Wagner, Lithium doping of amorphous silicon Journal of Electronic Materials. ,vol. 8, pp. 127- 137 ,(1979) , 10.1007/BF02663268
W.E Spear, R.J Loveland, A.Al-Sharbaty, The temperature dependence f photoconductivity in a-Si Journal of Non-Crystalline Solids. ,vol. 15, pp. 410- 422 ,(1974) , 10.1016/0022-3093(74)90147-1
W. E. Spear, P. G. Le Comber, Electronic properties of substitutionally doped amorphous Si and Ge Philosophical Magazine. ,vol. 33, pp. 935- 949 ,(1976) , 10.1080/14786437608221926
W. Beyer, R. Fischer, Interstitial doping of amorphous silicon Applied Physics Letters. ,vol. 31, pp. 850- 852 ,(1977) , 10.1063/1.89573
R.J. Loveland, W.E. Spear, A. Al-Sharbaty, Photoconductivity and absorption in amorphous Si Journal of Non-crystalline Solids. ,vol. 13, pp. 55- 68 ,(1973) , 10.1016/0022-3093(73)90035-5
W. E. Spear, P. G. Le Comber, A. J. Snell, An investigation of the amorphous-silicon barrier and p-n junction Philosophical Magazine Part B. ,vol. 38, pp. 303- 317 ,(1978) , 10.1080/13642817808245332
D. A. Anderson, W. E. Spear, Photoconductivity and recombination in doped amorphous silicon Philosophical Magazine. ,vol. 36, pp. 695- 712 ,(1977) , 10.1080/14786437708239749
W. E. Spear, P. G. Le Comber, S. Kalbitzer, G. Müller, Doping of amorphous silicon by alkali-ion implantations Philosophical Magazine Part B. ,vol. 39, pp. 159- 165 ,(1979) , 10.1080/13642817908246345