Recent results on ion-beam hydrogenation of amorphous silicon
作者： Y.S. Tsuo , Y. Xu , A. Mascarenhas , S.K. Deb , A.K. Barua
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摘要: The ion-beam hydrogenation of undoped amorphous silicon for solar cells obtained by dehydrogenation glow-discharge-deposited a-Si:H, glow-discharge deposition at 480 degrees C, and RF magnetron-sputter was investigated. A Kaufman ion source used to introduce hydrogen atoms into the a-Si:H. Highly photosensitive a-Si:H films with up 20 at.% bonded predominantly as monohydrides were obtained. authors report results Raman Scattering measurements magnetron-sputtering-deposited before after hydrogenation, comparisons posthydrogenation techniques, a possible application technique. >
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