Correlation of the ionisation response at selected points of IC sensitive regions with SEE sensitivity parameters under pulsed laser irradiation
作者： A V Gordienko , O B Mavritskii , A N Egorov , A A Pechenkin , D V Savchenkov
DOI: 10.1070/QE2014V044N12ABEH015519
关键词:
摘要: The statistics of the ionisation response amplitude measured at selected points and their surroundings within sensitive regions integrated circuits (ICs) under focused femtosecond laser irradiation is obtained for samples chosen from large batches two types ICs. A correlation between these data results full-chip scanning found each type. criteria express validation IC single-event effect (SEE) hardness based on measurements are discussed.
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