CHARACTERIZATION OF ZNO/TIO2 BILAYER FILM FOR EXTENDED GATE FIELD-EFFECT TRANSISTOR (EGFET) BASED PH SENSOR
作者： Rohanieza Abdul Rahman , Muhammad AlHadi Zulkefle , Khairul Aimi Yusof , Wan Fazlida Hanim Abdullah , Mohamad Rusop Mahmood
DOI: 10.11113/JT.V78.8747
关键词:
摘要: An extended gate field-effect transistor (EGFET) of ZnO/TiO 2 bilayer film as pH sensor was demonstrated in this paper. The sol-gel zinc oxide (ZnO) and titanium dioxide (TiO ) were prepared spin coated onto indium tin (ITO) glass substrate. After deposition process, then annealed from 200⁰C up to 700⁰C. EGFET measurement employed obtain the sensitivity thin towards buffer solution, which is pH4, pH7 pH10. According we obtained that at 400⁰C produced highest among other film, 66.8 mV/pH.
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