作者: P.R. Fields , I. Ahmad , R.F. Barnes , R.K. Sjoblom , Wm.C. McHarris
DOI: 10.1016/0375-9474(73)90375-8
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摘要: Abstract The decay scheme of 252Es has been investigated with high-resolution semiconductor detectors in conjunction coincidence techniques. half-life was measured by following the α-count rate associated and found to be 350±50 d. electron capture α-decay branchings were (22±2)% (78±6)%, respectively. EC almost entirely populates a level at 969.8 keV 252Cf logft value 8.9. This state identified as two-neutron n [613] 7 2 + ; [620] 1 3 . A Kπ = 2− band 830.8 keV. rotational built on an 804.8 interpreted γ-vibrational (Kπ 2+). On basis observed log ft value, ground given assignment {n[613] p [521] − 5 favored α-transition populate 590 248Bk. 248Bk spin-parity 6+ twoquasiparticle configuration [734] 9