Low-frequency negative capacitance effect in systems of metallic nanoparticles embedded in dielectric matrix
作者： G. B. Parravicini , A. Stella , M. C. Ungureanu , R. Kofman
DOI: 10.1063/1.1772872
关键词:
摘要: A negative capacitance (NC) effect in a low-frequency range (4–8×105Hz), previously shown to take place mainly semiconductor structures, is evidenced nanometric system constituted by metallic (Ga) nanoparticles embedded an insulating (SiOxwithx~1) matrix. The dependence of the NC phenomenon on time-dependent transient current through evidenced. remarkable enhancement with size reduction manifested. physical mechanism responsible for inertia appears be related space charges located at multiple insulator–metal interfaces.
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