Deposition of gold nanofeatures on silicon samples by field-induced deposition using a scanning tunneling microscope
作者： H. Abed , H. Jamgotchian , H. Dallaporta , B. Gely , P. Bindzi
DOI: 10.1116/1.1943440
关键词:
摘要: Gold islands of diameter as small 15 nm and 6 high were deposited on a standard silicon (100) surface by field-induced deposition using scanning tunneling microscope operating with Pt or W tips coated gold film. atoms are transferred applying to the sample negative voltage pulses few volts in magnitude, some tens microseconds duration. The tip morphology composition have been analyzed systematically field-emission gun electron plus energy dispersive x-ray (EDX) microanalysis before after its use for lithography. deposits also EDX. Finally, preliminary results trials direct bonding microscopic contact leads presented.
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